BFG235 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 235
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
7
pF
C_cb
5
4
3
2
1
0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
13
dB
10V
5V
G
11
3V
10
2V
9
8
1V
7
6
0.7V
5
0
50 100 150 200 mA 300
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
6.0
5V
GHz
f_T ^5.0
4.5
1V
4.0
3.5
3.0
0.7V
2.5
2.0
1.5
1.0
0
50 100 150 200
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 300
I_C
9
dB
G
7
6
5
10V
5V
3V
2V
4
1V
3
2
0.7V
1
0
0
50 100 150 200 mA 300
I_C
Semiconductor Group
5
Dec-13-1996