BFG235 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 235
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
120mA to 250mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• f_T = 5.5 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFG 235 BFG235 Q62702-F1432
1=E 2=B 3=E 4=C
Package
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 80 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
15
25
25
2
300
40
2000
150
- 65 ... + 150
- 65 ... + 150
≤ 35
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996