BFG235 Datasheet, PDF (3/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 235
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
AC Characteristics
Transition frequency
f_T
I_C = 200 mA, V_CE = 8 V, f = 200 MHz
4
5.5
Collector-base capacitance
C_cb
V_CB = 10 V, f = 1 MHz
-
2.6
Collector-emitter capacitance
C_ce
V_CE = 10 V, f = 1 MHz
-
1.5
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz
-
15
Noise figure
F
I_C = 60 mA, V_CE = 8 V, f = 900 MHz
Z_S = Z_Sopt
-
2.7
Power gain ²⁾
G_ma
I_C = 200 mA, V_CE = 8 V, f = 900 MHz
Z_S = Z_Sopt, Z_L = Z_Lopt
-
12
Transducer gain
|S_21e|²
I_C = 200 mA, V_CE = 8 V, f = 900 MHz
Z_S =Z_L= 50 Ω
-
6
Third order intercept point
IP₃
I_C = 200 mA, V_CE = 8 V, f = 900 MHz
Z_S =Z_L= 50 Ω
-
40
2) G_ma = |S₂₁/S₁₂| (k-(k²-1)^1/2)
max.
-
3.6
-
-
-
-
-
-
Unit
GHz
pF
dB
dBm
Semiconductor Group
3
Dec-13-1996