BCP29 Datasheet, PDF (5/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)

DC current gain hFE = f (IC)
VCE = 10 V
BCP 29
BCP 49
Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 1000
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 1000
Semiconductor Group
5