BCP29 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)

BCP 29
BCP 49
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
BCP 29
BCP 49
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCP 29
BCP 49
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
VCB = 60 V, IE = 0, TA = 150 ˚C
BCP 29
BCP 49
BCP 29
BCP 49
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain¹⁾
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
BCP 29
BCP 49
Collector-emitter saturation voltage
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage
IC = 100 mA, IB = 0.1 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
30
–
60
–
V(BR)CB0
40
–
80
–
V(BR)EB0 10
–
ICB0
–
–
–
–
–
–
–
–
IEB0
–
–
hFE
VCEsat
4000 –
2000 –
10000 –
4000 –
20000 –
10000 –
4000 –
2000 –
–
–
VBEsat
–
–
V
–
–
–
–
–
100 nA
100 nA
10
µA
10
µA
100 nA
–
–
–
–
–
–
–
–
–
1.0 V
1.5
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2