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BCP29 Datasheet, PDF (1/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain)
NPN Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: BCP 28/48 (PNP)
BCP 29
BCP 49
Type
BCP 29
BCP 49
Marking
BCP 29
BCP 49
Ordering Code
(tape and reel)
Q62702-C2136
Q62702-C2137
Pin Configuration
Package1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C2)
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BCP 29 BCP 49
30
60
40
80
10
10
500
800
100
200
1.5
150
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
≤ 75
≤ 17
Semiconductor Group
1
Unit
V
mA
W
˚C
K/W
5.91