SMBT6427 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistor

Base-emitter saturation voltage
IC = f (VBE sat), hFE = 1000
SMBT 6427
Collector-emitter saturation voltage
IC = f (VCE sat), hFE = 1000
Collector cutoff current ICB0 = f (TA)
VCB = VCE max
DC current gain hFE = f (IC)
VCE = 5 V
Semiconductor Group
4