SMBT6427 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistor

NPN Silicon Darlington Transistor
q For general amplifier applications
q High collector current
q High current gain
SMBT 6427
Type
SMBT 6427
Marking
s1V
Ordering Code
(tape and reel)
Q68000-A8320
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation, TS = 74 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Symbol
VCE0
VCB0
VEB0
IC
ICM
Ptot
Tj
Tstg
Values
Unit
40
V
40
12
500
mA
800
360
mW
150
˚C
– 65 … + 150
Rth JA
Rth JS
≤ 280
K/W
≤ 210
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
Semiconductor Group
1
5.91