SMBT6427 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistor

SMBT 6427
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
Collector-base breakdown voltage
IC = 100 µA
Emitter-base breakdown voltage, IE = 10 µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
Collector cutoff current
VCE = 30 V, IB = 0
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 500 mA, VCE = 5 V
Collector-emitter saturation voltage¹⁾
IC = 50 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
Base-emitter saturation voltage¹⁾
IC = 500 mA, IB = 0.5 mA
Base-emitter voltage
IC = 50 mA, VCE = 5 V
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 1 mA, VCE = 5 V, RS = 100 kΩ
f = 1 kHz to 15 kHz
1) _{Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.}
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 40
–
V(BR)CB0 40
–
V(BR)EB0 12
–
ICB0
–
–
–
–
ICE0
–
–
IEB0
–
–
hFE
VCEsat
VBEsat
10000 –
20000 –
14000 –
–
–
–
–
–
–
VBE(on)
–
–
–
V
–
–
50
nA
10
µA
1
µA
50
nA
–
100000
200000
140000
V
1.2
1.5
2.0
1.75
fT
130 –
–
MHz
Cobo
–
–
7
pF
Cibo
–
–
25
NF
–
–
10
dB
Semiconductor Group
2