CLY2 Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

GaAs FET
CLY 2
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0,5
0,45
0,4
0,35
0,3
0,25
0,2
0,15
0,1
0,05
0
0
Output Characteristics
PtotDC
1
2
3
4
5
Drain-Source Voltage [V]
VGS=0V
VGS=-0.5V
VGS=-1V
VGS=-1.5V
VGS=-2V
VGS=-2.5V
6
7
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; ID = 0.5IDSS
P1dB
η_D
40
80
[dBm]
[%]
35
70
30
60
25
50
20
15
10
5
0
01234
Dra in-Source Voltage
40
30
20
10
0
5 [V] 6
Siemens Aktiengesellschaft
pg. 3/77
17.12.96
HL EH PD 21