CLY2 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

GaAs FET
CLY 2
________________________________________________________________________________________________________
Electrical characteristics (T_A = 25°C , unless otherwise specified)
Characteristics
Symbol min
Drain-source saturation current
V_DS = 3 V V_GS = 0 V
Drain-source pinch-off current
V_DS = 3 V V_GS = -3.8 V
Gate pinch-off current
V_DS = 3 V V_GS = -3.8 V
Pinch-off Voltage
V_DS = 3 V I_D = 50 µA
Small Signal Gain ^*)
V_DS = 3 V I_D = 180 mA
Pin = -5 dBm
Small Signal Gain ^**)
f = 1.8 GHz
V_DS = 3 V I_D = 180 mA
Pin = -5 dBm
Output Power
f = 1.8 GHz
VDS = 3V I_D = 180 mA f = 1.8 GHz
Pin = 10 dBm
1dB-Compression Point
V_DS = 3 V I_D = 180 mA f = 1.8 GHz
I_DSS
I_D(p)
I_G(p)
VGS(p)
G
G
Po
P_1dB
300
-
-
-3.8
-
-
22.5
-
typ
450
5
5
-2.8
15.5
14.5
23.5
23.5
max
650
50
20
-1.8
-
-
-
Unit
mA
µA
µA
V
dB
dB
dBm
dBm
1dB-Compression Point
P_1dB
-
27.0
-
dBm
V_DS = 5 V I_D = 180 mA f = 1.8 GHz
Power Added Efficiency
PAE
-
55
-
%
VDS = 3V I_D = 180mA f = 1.8 GHz
Pin = 10 dBm
*_{) Matching conditions for maximum small signal gain ( not identical with power}
matching conditions ! )
**_{) Power matching conditions: f = 1.8 GHz}
Source Match: Γ_ms: MAG = 0.74, ANG 132°; Load Match: Γ_ml: ;MAG 0.61, ANG -153°
Siemens Aktiengesellschaft
pg. 2/77
17.12.96
HL EH PD 21