CLY2 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)

GaAs FET
CLY 2
________________________________________________________________________________________________________
Datasheet
* Power amplifier for mobile phones
* For frequencies up to 3 GHz
* Operating voltage range: 2 to 6 V
* P_OUT at V_D=3V, f=1.8GHz typ. 23.5 dBm
* High efficiency better 55 %
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
4
5
6
3
2
1
Type Marking Ordering code
(taped)
.1
CLY 2
Y2
Q62702-L96
G
Pin Configuration
2
3
4
5
S
D
D
S
Package 1)
6
G
MW 6
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation (TS < 50°C) ²⁾
Thermal Resistance
Channel-soldering point ²⁾
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
RthChS
9
12
-6
600
150
-55...+150
900
≤110
1) Dimensions see chapter Package Outlines
2) TS is measured on the source lead at the soldering point to the pcb.
Unit
V
V
V
mA
°C
°C
mW
K/W
Siemens Aktiengesellschaft
pg. 1/77
17.12.96
HL EH PD 21