BPX65 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Silizium-PIN-Fotodiode Silicon PIN Photodiode

BPX 65
BPX 66
Kennwerte (T_A = 25 ^oC, Normlicht A, T = 2856 K)
Characteristics (T_A = 25 ^oC, standard light A, T = 2856 K)
Bezeichnung
Description
Dunkelstrom
Dark current
BPX 65: V_R = 20 V
BPX 66: V_R = 1 V
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung, E_v = 1000 Ix
Open-circuit voltage
Kurzschluβstrom, E_v = 1000 Ix
Short-circuit current
Anstiegs und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R_L= 50 Ω; V_R = 5 V; λ = 850 nm; I_p = 800 µA
Durchlaβspannung, I_F = 100 mA, E = 0
Forward voltage
Kapazität, V_R = 0 V, f = 1 MHz, E = 0
Capacitance
Temperaturkoeffizient von V_L
Temperature coefficient of V_L
Temperaturkoeffizient von I_K
Temperature coefficient of I_K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V_R = 20 V, λ = 850 nm
Nachweisgrenze, V_R = 20 V, λ = 850 nm
Detection limit
Symbol
Symbol
I_R
S_λ
η
V_L
I_K
t_r, t_f
V_F
C₀
TC_V
TC_I
NEP
D*
Wert
Value
Einheit
Unit
1 (≤ 5)
0.15 (≤ 0.3)
0.55
0.80
320 (≥ 270)
10
12
nA
A/W
Electrons
Photon
mV
µA
ns
1.3
11
–2.6
0.2
3.3 x 10^–14
3.1 x 10¹²
V
pF
mV/K
%/K
W
√Hz
cm · √Hz
W
Semiconductor Group
344