BFQ74 Datasheet, PDF (3/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)

BBFFQQ 7744
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 200 MHz
IC = 15 mA, VCE = 10 V, f = 200 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Noise figure
IC = 3 mA, VCE = 10 V, f = 10 MHz, ZS = 75 Ω
IC = 5 mA, VCE = 10 V, f = 800 MHz, ZS = 50 Ω
IC = 10 mA, VCE = 10 V, f = 2 GHz, ZS = ZSopt
Power gain
IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω
IC = 15 mA, VCE = 10 V, f = 4 GHz, Z0 = 50 Ω
Transducer gain
IC = 15 mA, VCE = 10 V, f = 2 GHz, Z0 = 50 Ω
Linear output voltage
two-tone intermodulation test
IC = 25 mA, VCE = 10 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
IC = 25 mA, VCE = 10 V, f = 800 MHz
fT
–
–
Ccb
–
Cce
–
Cibo
–
Cobs
–
F
–
–
–
Gma¹)
–
Gms²)
–
I S21e I ² –
Vo1 = Vo2 –
IP3
–
4.4 –
6
–
GHz
0.3 0.4 pF
0.4 –
1.35 –
0.7 –
dB
0.9 –
1.4 –
2.5 2.9
14 –
9.8 –
9.8 –
160 –
mV
27 –
dBm
1)
S21e _{(k – √k 2– 1)}
S12e
2)
S21e
S12e