BFQ74 Datasheet, PDF (2/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)

BBFFQQ 7744
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 15 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 5 mA, VCE = 10 V
IC = 15 mA, VCE = 10 V
Collector-emitter saturation voltage
IC = 30 mA, IB = 3 mA
Base-emitter voltage
IC = 10 mA, VCE = 10 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 16
ICES
–
ICB0
–
IEB0
–
hFE
50
50
VCEsat
–
VBE
–
–
–
V
–
100 µA
–
50 nA
–
10
µA
–
110 250
120 –
0.13 0.3 V
0.78 –