BFQ74 Datasheet, PDF (1/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)

NPN Silicon RF Transistor
q For low-noise amplifiers in the GHz range,
and broadband analog and digital applications
in telecommunications systems at collector
currents from 1 mA to 25 mA.
q Hermetically sealed ceramic package.
q HiRel/Mil screening available.
BFQ 74
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 74
Marking
74
Ordering Code
(tape and reel)
Q62702-F788
Pin Configuration
1 2 34
B ECE
Package¹⁾
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f ≥ 10 MHz
Base current
Total power dissipation, TS ≤ 115 ˚C³⁾
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point³⁾
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
Ptot
Tj
TA
Tstg
Values
Unit
16
V
25
25
2
35
mA
45
5
300
mW
175
˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 280
K/W
≤ 200
1) _{For detailed dimensions see chapter Package Outlines.}
2) _{Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.}
3) _{TS is measured on the collector lead at the soldering point to the pcb.}