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BFQ70 Datasheet, PDF (3/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | |||
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BFQ 70
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
AC Characteristics
Transition frequency
IC = 3 mA, VCE = 6 V, f = 200 MHz
IC = 20 mA, VCE = 6 V, f = 200 MHz
Collector-base capacitance
VCB = 6 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 6 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
VCE = 6 V, VBE = vbe = 0, f = 1 MHz
Noise figure
IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 â¦
IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 â¦
Power gain
IC = 20 mA, VCE = 6 V, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
Transducer gain
IC = 10 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 â¦
Linear output voltage
two-tone intermodulation test
IC = 20 mA, VCE = 6 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 â¦
Third order intercept point
IC = 20 mA, VCE = 6 V, f = 800 MHz
Symbol
Values
Unit
min. typ. max.
fT
GHz
â
2.7 â
3.6 5
â
Ccb
â
0.46 0.6 pF
Cce
â
0.41 â
Cibo
â
2.2 â
Cobs
â
0.87 1.3
F
dB
â
0.9 1.2
â
1.5 â
Gpe
â
18 â
I S21e I 2 â
13 â
Vo1 = Vo2 â
170 â
mV
IP3
â
27.5 â
dBm
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