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BFQ70 Datasheet, PDF (2/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) | |||
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BFQ 70
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 3 mA, VCE = 6 V
IC = 10 mA, VCE = 6 V
Collector-emitter saturation voltage
IC = 20 mA, IB = 1 mA
Base-emitter voltage
IC = 10 mA, VCE = 6 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 15
ICB0
â
IEB0
â
hFE
50
50
VCEsat
â
VBE
â
â
â
V
â
50 nA
â
10
µA
â
â
250
130 â
0.1 0.4 V
0.78 â
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