BFQ70 Datasheet, PDF (1/14 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)

NPN Silicon RF Transistor
q For low-noise IF and broadband amplifiers in
antenna and telecommunications systems at
collector currents from 2 mA to 20 mA.
q Hermetically sealed ceramic package
q HiRel/Mil screening available.
BFQ 70
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 70
Marking
70
Ordering Code
(tape and reel)
Q62702-F774
Pin Configuration
1 2 34
B ECE
Package¹⁾
Cerex-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 121 ˚C³⁾
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point³⁾
Symbol
VCE0
VCES
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15
V
20
20
2.5
35
mA
4
300
mW
175
˚C
– 65 … + 175
– 65 … + 175
Rth JA
Rth JS
≤ 260
K/W
≤ 180
1) _{For detailed dimensions see chapter Package Outlines.}
2) _{Package mounted on alumina 16 mm × 25 mm × 0.7 mm.}
3) _{TS is measured on the collector lead at the soldering point to the pcb.}