BFQ29P Datasheet, PDF (3/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

BFQ 29P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
AC Characteristics
Transition frequency
IC = 3 mA, VCE = 6 V, f = 200 MHz
IC = 20 mA, VCE = 6 V, f = 200 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
VCE = 10 V, VBE = vbe = 0, f = 1 MHz
Noise figure
IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 Ω
IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 Ω
Power gain
IC = 20 mA, VCE = 6 V, f = 800 MHz,
Z0 = 50 Ω, ZL = ZLopt
Transducer gain
IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Ω
Linear output voltage
two-tone intermodulation test
IC = 20 mA, VCE = 6 V, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
IC = 20 mA, VCE = 6 V, f = 800 MHz
Symbol
Values
Unit
min. typ. max.
fT
GHz
–
2.7 –
3.6 5
–
Ccb
–
0.5 0.65 pF
Cce
–
0.28 –
Cibo
–
1.35 –
Cobs
–
0.8 –
F
dB
–
0.9 1.2
–
1.5 –
Gpe
–
14 –
I S21e I ² –
11 –
Vo1 = Vo2 –
180 –
mV
IP3
–
28 –
dBm