BFQ29P Datasheet, PDF (2/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

BFQ 29P
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 20 V, IE = 0
Emitter-base cutoff current
VEB = 3 V, IC = 0
DC current gain
IC = 3 mA, VCE = 6 V
IC = 10 mA, VCE = 6 V
Collector-emitter saturation voltage
IC = 20 mA, IB = 1 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 15
ICB0
–
–
IEB0
–
hFE
50
50
VCEsat
–
–
–
V
µA
–
0.05
–
10
–
100 µA
–
–
250
140 –
0.1 0.4 V