BFQ29P Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

NPN Silicon RF Transistor
q For low-noise IF and broadband amplifiers up to
1 GHz at collector currents from 1 mA to 20 mA.
q CECC-type available: CECC 50002/258.
BFQ 29P
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFQ 29P
Marking
KC
Ordering Code
(tape and reel)
Q62702-F659
Pin Configuration
1
2
3
B
E
C
Package¹⁾
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS ≤ 65 ˚C³⁾
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point³⁾
Symbol
VCE0
VCB0
VEB0
IC
IB
Ptot
Tj
TA
Tstg
Values
Unit
15
V
20
3
30
mA
4
280
mW
150
˚C
– 65 … + 150
– 65 … + 150
Rth JA
Rth JS
≤ 385
K/W
≤ 305
1) _{For detailed dimensions see chapter Package Outlines.}
2) _{Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.}
3) _{TS is measured on the collector lead at the soldering point to the pcb.}