BCV62 Datasheet, PDF (3/5 Pages) NXP Semiconductors – PNP general purpose double transistor

BCV 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T2
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
Matching of transistor T1 and transistor T2
at IE2 = 0.5 mA and VCE1 = 5 V
TA = 25 ˚C
TA = 150 ˚C
Thermal coupling of transistor T1 and
transistor T2¹⁾ T1: VCE = 5 V
Maximum current for thermal stability of IC1
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, IC = iC = 0, f = 1 MHz
Input capacitance
VEB = 0.5 V, IC = iC = 0, f = 1 MHz
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 kΩ
f = 1 kHz, B = 200 Hz
Input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transfer ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Symbol
Values
Unit
min. typ. max.
VBES
0.4 –
–
–
V
–
1.8
IC1 / IC2 0.7
–
IC1 / IC2 0.7
–
IE2
–
5
1.3
1.3
–
mA
fT
–
250 –
MHz
Ccb
–
3
–
pF
Cibo
–
8
–
F
–
2
–
dB
h11e
–
4.5 –
kΩ
h12e
–
2
–
10^{– 4}
h21e
100 –
900 –
h22e
–
30 –
µS
1) _{Without emitter resistor. Device mounted on alumina 15 mm × 16.5 mm × 0.7 mm.}
Semiconductor Group
3