BCV62 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP general purpose double transistor

PNP Silicon Double Transistors
Preliminary Data
q To be used as a current mirror
q Good thermal coupling and VBE matching
q High current gain
q Low emitter-saturation voltage
BCV 62
Type
BCV 62 A
BCV 62 B
BCV 62 C
Marking
3Js
3Ks
3Ls
Ordering Code
(tape and reel)
Q62702-C2158
Q62702-C2159
Q62702-C2160
Pin Configuration
Package¹⁾
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
Collector current
Collector peak current
Base peak current (transistor T1)
Total power dissipation, TS = 99 ˚C²⁾
Junction temperature
Storage temperature range
Symbol
VCE0
VCB0
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Values
Unit
30
V
30
6
100
mA
200
200
300
mW
150
˚C
– 65 … + 150
Thermal Resistance
Junction - ambient²⁾
Junction - soldering point
Rth JA
Rth JS
≤ 240
≤ 170
1) _{For detailed information see chapter Package Outlines.}
2) _{Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm}2 _Cu.
K/W
Semiconductor Group
1
5.91