BCV62 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP general purpose double transistor

BCV 62
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
DC current gain¹⁾
IC = 0.1 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
BCV 62 A
BCV 62 B
BCV 62 C
Collector-emitter saturation voltage¹⁾
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage¹⁾
IC = 10 mA, IC = 0.5 mA
IC = 100 mA, IC = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
–
–
V
V(BR)CB0 30
–
–
V(BR)EBS 6
–
–
ICB0
hFE
VCEsat
VBEsat
VBE
–
–
15 nA
–
–
5
µA
–
100 –
125 180 220
220 290 475
420 520 800
mV
–
75 300
–
250 650
–
700 –
–
850 –
600 650 750
–
–
820
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2