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| HYB5117800BSJ-50- Datasheet, PDF (21/23 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh | |||
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HYB 5(3)117800/BSJ-50/-60
2M Ã 8 DRAM
Read Cycle
VIH
RAS
VIL
VIH
CAS
VIL
VIH
Address
VIL
VIH
WE
VIL
VIH
OE
VIL
I/O
VIH
(Inputs) VIL
I/O
VOH
(Outputs) VOL
Write Cycle
VIH
WE
VIL
VIH
OE
VIL
I/O
VIH
(Inputs) VIL
I/O
VOH
(Outputs) VOL
t CSR
t CHR
t WRP
t WRH
t WRP
t WRH
"H" or "L"
t RAS
t RP
t RSH
t CP
t CAS
t ASC
t RAL
t CAH
Column
t AA
t RCS
t CAC
t OEA
t ASR
Row
t RRH
t RCH
t DZC
t DZO
t CLZ
t WCS
t RWL
t CWL
t WCH
t ODD
t CDD
t OFF
t OEZ
Data OUT
t DH
t DS
Data IN
Hi Z
SPT03036
CAS-before-RAS Refresh Counter Test Cycle
Semiconductor Group
21
1998-10-01
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