HYB5117800BSJ-50- Datasheet, PDF (2/23 Pages) Siemens Semiconductor Group – 2M x 8 - Bit Dynamic RAM 2k Refresh

HYB 5(3)117800/BSJ-50/-60
2M × 8 DRAM
The HYB 5(3)117800 are 16 MBit dynamic RAMs based on the die revisions “G” & “F” and
organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117800 to
be packaged in a standard SOJ-28 plastic package. Package with 400 mil width are available.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment.
Ordering Information
Type
HYB 5117800BSJ-50
HYB 5117800BSJ-60
HYB 3117800BSJ-50
HYB 3117800BSJ-60
Ordering Code Package
Descriptions
Q67100-Q1092 P-SOJ-28-3 400 mil 5 V 50 ns FPM-DRAM
Q67100-Q1093 P-SOJ-28-3 400 mil 5 V 60 ns FPM-DRAM
on request
P-SOJ-28-3 400 mil 3.3 V 50 ns FPM-DRAM
on request
P-SOJ-28-3 400 mil 3.3 V 60 ns FPM-DRAM
Pin Names and Configuration
A0 - A10 Row Address Inputs
A0 - A9 Column Address Inputs
RAS
Row Address Strobe
OE
Output Enable
I/O1 - I/O8 Data Input/Output
CAS
Column Address Strobe
WE
Read/Write Input
V_CC
Power Supply
+ 5 V for HYB 5117800
+ 3.3 V for HYB 3117800
V_SS
N.C.
Ground (0 V)
Not Connected
P-SOJ-28 400 mil
V _CC 1
I/O1 2
I/O2 3
I/O3 4
I/O4 5
WE 6
RAS 7
N.C. 8
A10 9
A0 10
A1 11
A2 12
A3 13
V _CC 14
28 V _SS
27 I/O8
26 I/O7
25 I/O6
24 I/O5
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 V _SS
SPP02803
Semiconductor Group
2
1998-10-01