HYB39S16400-1 Datasheet, PDF (15/19 Pages) Siemens Semiconductor Group – 16 MBit Synchronous DRAM

HYB 39S16400/800/160CT-8/-10
16 MBit Synchronous DRAM
AC Characteristics ^{1, 2, 3}
T_A = 0 to 70 °C; V_SS = 0 V; V_CC = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symbol
Limit Values
Unit Note
-8
-10
min. max. min. max.
Clock and Clock Enable
Clock cycle time
CAS Latency = 3 t_CK
CAS Latency = 2
Clock frequency
CAS Latency = 3 t_CK
CAS Latency = 2
Access time from clock
CAS Latency = 3 t_AC
CAS Latency = 2
Clock High Pulse width
t_CH
Clock Low Pulse width
t_CL
Transition time
t_T
Setup and Hold Times
Input Setup time
t_IS
Input Hold time
t_IH
CKE Setup time
t_CKS
CKE Hold time
t_CKH
Mode Register Setup time
t_RSC
Power Down Mode Entry time
t_SB
Common Parameters
Row to Column delay time
t_RCD
Row Precharge time
t_RP
Row Active time
t_RAS
Row Cycle time
t_RC
Activate (a) to Activate (b) Command
t_RRD
period
CAS (a) to CAS (b) Command period
t_CCD
8
–
10 –
ns
10 –
15 –
ns
–
125 –
100 MHz
–
100 –
66 MHz
–
6
–
6
3
–
3
–
0.5 10
–
7
–
8
3
–
3
–
0.5 10
ns
2, 4
ns
ns
ns
ns
2
–
1
–
2
–
1
–
16 –
0
8
2.5 –
1
–
2.5 –
1
–
20 –
0
10
ns ⁵
ns ⁵
ns ⁵
ns ⁵
ns
ns
20 –
30 –
ns
20 –
30 –
ns
50 100k 60 100k ns
70 –
90 –
ns
16 –
20 –
ns
1
–
1
–
CLK
Semiconductor Group
15
1998-10-01