HYM64V4005GU-50 Datasheet, PDF (12/17 Pages) Siemens Semiconductor Group – 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module

HYM64(72)V4005/45GU-50/-60
4M x 64/72 DRAM Module
AC Characteristics (contd’ ) ⁵⁾⁶⁾
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, t_T = 2 ns
Parameter
Symbol
Limit Values
-50
-60
min. max. min. max.
Output turn-off delay from OE
Data to CAS low delay
Data to OE low delay
CAS high to data delay
OE high to data delay
t_OEZ
0
13
0
15
t_DZC
0
–
0
–
t_DZO
0
–
0
–
t_CDD
10
–
13
–
t_ODD
10
–
13
–
Unit
ns
ns
ns
ns
ns
16E
Note
12
13
13
14
14
Write Cycle
Write command hold time
t_WCH
8
–
10
–
ns
Write command pulse width
t_WP
8
–
10
–
ns
Write command setup time
t_WCS
0
–
0
–
ns 15
Write command to RAS lead time
t_RWL
13
–
15
–
ns
Write command to CAS lead time
t_CWL
13
–
15
–
ns
Data setup time
t_DS
0
–
0
–
ns 16
Data hold time
t_DH
8
–
10
–
ns 16
Read-modify-Write Cycle
Read-write cycle time
t_RWC
113
–
138
–
ns
RAS to WE delay time
t_RWD
64
–
77
–
ns 15
CAS to WE delay time
t_CWD
27
–
32
–
ns 15
Column address to WE delay time
t_AWD
39
–
47
–
ns 15
OE command hold time
t_OEH
10
–
13
–
ns
Hyper Page Mode (EDO) Cycle
EDO cycle time
CAS precharge time
Access time from CAS precharge
Output data hold time
RAS pulse width in EDO mode
CAS precharge to RAS Delay
OE setup time prior to CAS
t_HPC
t_CP
t_CPA
t_COH
t_RAS
t_RHPC
t_OES
20
–
25
–
ns
8
–
10
–
ns
–
27
–
32
ns 7
5
–
5
–
ns
50 200k 60 200k ns
27
–
32
–
ns
5
–
5
–
ns
Semiconductor Group
12