HYM64V4005GU-50 Datasheet, PDF (1/17 Pages) Siemens Semiconductor Group – 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module

3.3V 4M × 64-Bit EDO-DRAM Module
3.3V 4M x 72-Bit EDO-DRAM Module
168pin unbuffered DIMM Module
with serial presence detect
HYM64V4005GU-50/-60
HYM64V4045GU-50/-60
HYM72V4005GU-50/-60
HYM72V4045GU-50/-60
• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
for PC main memory applications
• 1 bank 4M x 64, 4M x 72 in 2k and 4k refresh organisations
• Optimized for byte-write non-parity or ECC applications
• Extended Data Out (EDO)
• Performance:
tRAC
tCAC
tAA
tRC
tHPC
RAS Access Time
CAS Access Time
Access Time from Address
Cycle Time
EDO Mode Cycle Time
-50
50 ns
13 ns
25 ns
84 ns
20 ns
-60
60 ns
15 ns
30 ns
104 ns
25 ns
• Single +3.3 V ± 0.3 V Power Supply
• CAS-before-RAS refresh, RAS-only-refresh
• Decoupling capacitors mounted on substrate
• All inputs, outputs and clocks are fully LV-TTL compatible
• Serial presence detects (optional)
• Utilizes 4M x 4 -DRAMs in TSOPII packages
• 2048 refresh cycles / 32 ms with 11 / 11 addressing ( Row / Column) for HYM64/72V4005GU
• 4096 refresh cycles / 64 ms with 12 / 10 addressing ( Row / Column) for HYM64/72V4045GU
• Gold contact pads
• Card Size: 133,35mm x 25,40 mm x 4,00 mm
• This DRAM product module family is intended to be fully pin and architecture compatible
with the 168pin unbuffered SDRAM DIMM module family
Semiconductor Group
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