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HYM64V4005GU-50 Datasheet, PDF (10/17 Pages) Siemens Semiconductor Group – 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module | |||
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HYM64(72)V4005/45GU-50/-60
4M x 64/72 DRAM Module
DC Characteristics for HYM64/72V4045
TA = 0 to 70 °C; VCC = 3.3 V ± 0.3 V
Parameter
Symbol
x 64
min. max.
Average VCC supply current:
ICC1
-50 version
-60 version
â 1600
â 1440
x 72
min. max.
â 1800
â 1620
Unit Note
s
mA 2) 3)
mA 4)
(RAS,CAS,address cycling, tRC=tRC min.)
Standby VCC supply current
ICC2
(RAS = CAS = VIH, one address change)
Average VCC supply current during RAS ICC3
only refresh cycles:
-50 version
-60 version
â
32
â
36 mA â
2) 4)
â 1600 â 1800 mA
â 1440 â 1620 mA
(RAS cycling, CAS = VIH , tRC = tRC min.)
Average VCC supply current during
ICC4
hyper page mode (EDO):
-50 version
-60 version
â
1120
â
1260 mA 2) 3)
â
880
â
990 mA 4)
(RAS = VIL, CAS, address cycling
tPC = tPC min.)
Standby VCC supply current
ICC5
(RAS = CAS = VCC â 0.2 V, one address
change)
Average VCC supply current during
ICC6
CAS-before-RAS refresh mode:
-50 version
-60 version
â
16
â
18 mA â
â
1600
â
1800 mA 2) 4)
â 1440 â 1620 mA
(RAS, CAS cycling, tRC = tRC min.)
Semiconductor Group
10
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