MTB030N10RQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1.0
ID=1mA
C _oss
100
f=1MHz
Crss
10
0
5
10 15 20 25 30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1
VDS=15V
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01
0.1
1
10
100
ID, Drain Current(A)
2
VDS=80V
ID=10A
0
0
5
10 15 20 25 30
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1
1ms
10ms
0.1
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Junction Temperature
8
6
4
2
TA=25°C,RθJA=40°C/W,VGS=10V
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB030N10RQ8
CYStek Product Specification