MTB030N10RQ8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
25
10V,9V,8V,7V,6V,5V,4.5V,4V,3.5V,3V
20
Brekdown Voltage vs Ambient Temperature
1.4
1.2
15
2.5V
1
10
5
VGS=2V
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=4.5V
VGS=10V
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
ID=10A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
3.2
2.8
VGS=10V, ID=10A
RDS(ON)@Tj=25°C : 22.7mΩ typ.
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB030N10RQ8
CYStek Product Specification