MTB030N10RQ8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C053Q8
Issued Date : 2016.11.04
Revised Date :
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Dynamic
td(ON) *1, 2
-
11.6
-
tr *1, 2
-
17.4
-
ns
td(OFF) *1, 2
-
42.6
-
tf *1, 2
-
5.6
-
Rg
-
1.8
-
Ω
Source-Drain Diode Ratings and Characteristics
IS *1
-
-
6.2
A
ISM *3
-
-
25
VSD *1
-
0.84
1.2
V
trr
-
25.6
-
ns
Qrr
-
32
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VDS=50V, ID=10A, VGS=10V, RGS=1Ω
f=1MHz
IS=10A, VGS=0V
IF=10A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB030N10RQ8
CYStek Product Specification