SUD50P06-15 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD50P06-15
P-Channel 60 V (D-S) MOSFET
TYPICAL CHARACTERISTICS
2.0
V_GS = 10 V
1.8
I_D = 17 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS (25 °C, unless otherwise noted)
60
50
40
30
100
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
Limited by R_DS(on)*
10
P(t) = 0.0001
BVDSS
Limited
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Drain Current vs. Case Temperature
2
1
Duty Cycle = 0.5
P(t) = 0.001
T_C = 25 °C
Single Pulse
P(t) = 0.1
P(t) = 0.01
1
P(t) = 1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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