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SUD50P06-15 Datasheet, PDF (2/7 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET
SUD50P06-15
P-Channel 60 V (D-S) MOSFET
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 60
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-1
V
-3
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 60 V, VGS = 0 V
-1
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
µA
VDS = - 60 V, VGS = 0 V, TJ = 150 °C
- 100
On-State Drain Currenta
ID(on)
VDS = -5 V, VGS = - 10 V
- 50
A
VGS = - 10 V, ID = - 17 A
0.012
0.015
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 50 A, TJ = 125 °C
VGS = - 10 V, ID = - 50 A, TJ = 150 °C
0.025

0.028
VGS = - 4.5 V, ID = - 14 A
0.020
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 17 A
61
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = - 30 V, VGS = - 10 V, ID = - 50 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 30 V, RL = 0.6 
ID  - 50 A, VGEN = - 10 V, RG = 6 
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD
IF = - 50 A, VGS = 0 V
Reverse Recovery Time
trr
IF = - 50 A, dI/dt = 100 A/µs
4950
480
pF
405
110
165
19
nC
28
15
23
70
105
ns
175
260
175
260
- 50
A
- 80
-1
- 1.6
V
45
70
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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