SUD50P06-15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD50P06-15
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.015 at V_GS = - 10 V
- 60
0.020 at V_GS = - 4.5 V
TO-252
I_D (A)
- 50^d
- 50^d
FEATURES
• TrenchFET^® Power MOSFET
• Material categorization:
For definitions of compliance please see
APPLICATIONS
• Load Switch
S
Drain Connected to Tab
GDS
Top View
Ordering Information
SUD50P06-15-GE3 (Lead (Pb)-free and Halogen-free)
SUD50P06-15-T4-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 60
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
- 50^d
- 27.5
A
I_DM
- 80
Avalanche Current
I_AS
- 50
Single Pulse Avalanche Energy^a
L = 0.1 mH
E_AS
125
mJ
Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
113^c
2.5^{b, c}
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Notes:
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
°C/W
1/7
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