SUD50P04-09L Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
100
V_GS = 10 V
1.6
I_D = 50 A
1.4
1.2
10
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
60
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
1000
Safe Operating Area
50
I_DM Limited
r_DS(on) Limited
40
100
30
I_D(on)
Limited
20
10
T_C = 25_C
10
Single Pulse
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (_C)
1
BV_DSS Limited
0.1
1
10
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
100
0.2
0.1
0.1 0.05
0.01
10 ^{- 4}
0.02
Single Pulse
10 ^{- 3}
4/5
10 ^{- 2}
Square Wave Pulse Duration (sec)
10 ^{- 1}
1
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