SUD50P04-09L Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0094 @ V_GS = - 10 V
- 40
0.0145 @ V_GS = - 4.5 V
TO-252
I_D (A)^d
- 50
- 50
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automotive 12-V Boardnet
S
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD50P04-09L
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^a
Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
- 40
"20
- 50^d
- 50^d
- 100
- 50
125
136^c
3^{b, c}
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
_C/W
1/5
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