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SUD50P04-09L Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET
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SUD50P04-09L
P-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = - 250 mA
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "20 V
VDS = - 32 V, VGS = 0 V
VDS = - 32 V, VGS = 0 V, TJ = 125_C
VDS = - 32 V, VGS = 0 V, TJ = 175_C
VDS = - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 24 A
VGS = - 10 V, ID = - 50 A, TJ = 125_C
VGS = - 10 V, ID = - 50 A, TJ = 175_C
VGS = - 4.5 V, ID = - 18 A
VDS = - 5 V, ID = - 24 A
Input Capacitance
Ciss
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = - 25 V, f = 1 MHz
VDS = - 20 V, VGS = - 10 V, ID = - 50 A
VDD = - 20 V, RL = 0.4 W
ID ] - 50 A, VGEN = - 10 V, RG = 6 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Is
ISM
VSD
IF = - 50 A, VGS = 0 V
trr
IF = - 50 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
- 40
V
-1
-3
"100
nA
-1
- 50
mA
- 150
- 50
A
0.0075 0.0094
0.014
W
0.017
0.0115 0.0145
73
S
4800
700
pF
550
102
150
18.5
nC
27
10
15
60
90
ns
145
220
140
220
- 50
A
- 100
- 1.0
- 1.5
V
55
85
ns
2/5
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