IRFR3709Z Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3709Z
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 12A
5.0
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
5
10
15
20
25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
10
1
TJ = 25°C
0
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
1msec
10msec
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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