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| IRFR3709Z Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U3709Z
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
âââ
âââ
âââ
1.35
âââ
âââ
22
5.2
6.5
1.80
-5.6
âââ
âââ
6.5
8.2
2.25
âââ
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 15A
e VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
51 âââ âââ S VDS = 15V, ID = 12A
Qg
Total Gate Charge
âââ 17 26
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 4.7 âââ
VDS = 15V
âââ 1.6 âââ nC VGS = 4.5V
âââ 5.7 âââ
ID = 12A
âââ 5.0 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 7.3 âââ
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
âââ 10 âââ nC VDS = 16V, VGS = 0V
âââ 12 âââ
e VDD = 16V, VGS = 4.5V
âââ 12 âââ
ID = 12A
âââ 15 âââ ns Clamped Inductive Load
tf
Fall Time
âââ 3.9 âââ
Ciss
Input Capacitance
âââ 2330 âââ
VGS = 0V
Coss
Output Capacitance
âââ 460 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 230 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
EAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
100
12
7.9
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
f Min. Typ. Max. Units
Conditions
âââ âââ 86
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 340
integral reverse
G
âââ âââ 1.0
âââ 29 44
âââ 25 37
p-n junction diode.
S
e V TJ = 25°C, IS = 12A, VGS = 0V
e ns TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 / 11
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