IRFR3709Z Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3709Z
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
30V
6.5m: 17nC
D-Pak
IRFR3709Z
I-Pak
IRFU3709Z
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Max.
30
± 20
86f
61f
340
79
39
0.53
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
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