SUD50N03-12P Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C unless noted)
80
T_C = - 55 °C
60
25 °C
125 °C
40
20
0
0
2500
10
20
30
40
50
I_D - Drain Current (A)
Transconductance
2000
C_iss
1500
1000
500
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
V_GS = 10 V
1.6
I_D = 15 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
0.05
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0.00
0
20
40
60
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
8
V_DS = 15 V
I_D = 50 A
6
4
2
0
0
100
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
10
T_J = 25 °C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3/7
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