SUD50N03-12P Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
30
0.0120 at V_GS = 10 V
0.0175 at V_GS = 4.5 V
TO-252
I_D (A)^a
17.5
14.5
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
D
GD S
Top View
Drain Connected to Tab
Ordering Information: SUD50N03-12P-E3 (Lead (PB) free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current^a
T_A = 25 °C
T_A = 100 °C
I_D
17.5
12.4
Pulsed Drain Current
I_DM
40
A
Continuous Source Current (Diode Conduction)^a
I_S
5
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
30
E_AS
45
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
46.8
6.5^a
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Note:
a. Surface mounted on FR4 board, t  10 s.
t  10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
18
40
2.6
Maximum
23
50
3.2
Unit
°C/W
1/7
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