SUD50N03-12P Datasheet, PDF (2/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUD50N03-12P
N-Channel
30 V (D-S) MOSFET
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V_DS
V_GS(th)
I_GSS
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 125 °C
On-State Drain Current^b
I_D(on)
V_DS =5 V, V_GS = 10 V
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125 °C
V_GS = 4.5 V, I_D = 15 A
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 20 A
Dynamic^a
Input Capacitance
Output Capacitance
C_iss
C_oss
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge^c
Gate-Source Charge^c
Q_g
Q_gs
V_DS = 15 V, V_GS = 10 V, I_D = 50 A
Gate-Drain Charge^c
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
t_d(on)
t_r
t_d(off)
V_DD = 15 V, R_L = 0.3 
I_D  50 A, V_GEN = 10 V, R_G = 2.5 
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics (T_C = 25 °C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
I_F = 40 A, V_GS = 0 V
Source-Drain Reverse Recovery Time
t_rr
I_F = 50 A, dI/dt = 100 A/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
c. Independent of operating temperature.
Min .
Typ.^a
Max.
Unit
30
V
1
3
± 100
nA
1
µA
50
40
A
0.0100 0.0120
0.0170

0.0138 0.0175
15
S
1600
285
pF
140
28
42
6
nC
5
0.3
1.5
3.0

9
15
15
25
ns
20
30
12
20
100
A
1.2
1.5
V
25
70
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C unless noted)
80
80
V_GS = 10 thru 5 V
60
60
40
4V
20
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2/7
40
T_C = 125 °C
20
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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