SUD50N024-09P Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 22-V (D-S) 175C MOSFET

SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
60
T_C = −55_C
50
25_C
40
125_C
0.030
0.025
0.020
30
0.015
20
0.010
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
10
0.005
0
0
2000
10
20
30
40
50
I_D − Drain Current (A)
Capacitance
0.000
0
10
20
40
60
80
100
I_D − Drain Current (A)
Gate Charge
1600
C_iss
1200
8
V_DS = 10 V
I_D = 50 A
6
800
400
C_rss
C_oss
0
0
4
8
12
16
20
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 30 A
1.4
1.2
1.0
0.8
0.6
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
4
2
0
0
4
8
12
16
20
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
3/5
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