SUD50N024-09P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 22-V (D-S) 175C MOSFET

SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0095 @ V_GS = 10 V
24^c
0.017 @ V_GS = 4.5 V
TO-252
I_D (A)^d
49
36
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC
D
Conversion
− Desktop
− Server
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N024-09P
SUD50N024-09P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C= 100_C
L = 0.1 mH
T_A = 25_C
T_C = 25_C
V_DS(pulse)
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
24^C
22
"20
49d
34^d
100
4.3
29
42
6.5^a
39.5
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
t v 10 sec
Steady State
R_thJA
Maximum Junction-to-Case
R_thJC
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
c. Pulse condition: T_A = 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
1/5
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
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