SUD50N024-09P Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 22-V (D-S) 175C MOSFET

SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 125_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A, T_J = 125_C
V_GS = 4.5 V, I_D = 20 A
V_DS = 15 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
R_g
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 10 V, f = 1 MHz
V_DS = 10 V, V_GS = 4.5 V, I_D = 50 A
V_DD = 10 V, R_L = 0.2 W
I_D ^ 50 A, V_GEN = 10 V, R_g = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
I_F = 50 A, V_GS = 0 V
I_F = 50 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typ^a Max Unit
22
V
0.8
3.0
"100
nA
1
50
mA
50
A
0.008 0.0095
0.014
W
0.0135 0.017
15
S
1300
470
pF
275
1.6
4.0
6
W
10.5
16
4.2
nC
4.0
8
12
10
15
25
40
ns
12
20
100
A
1.2
1.5
V
35
70
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
100
V_GS = 10 thru 6 V
5V
80
80
60
60
4V
40
40
Transfer Characteristics
T_C = −55_C
25_C
125_C
20
0
0
2/5
3V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
20
0
0
1
2
3
4
5
6
V_GS − Gate-to-Source Voltage (V)
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