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GP1S36J0000F Datasheet, PDF (8/11 Pages) Sharp Electrionic Components – Phototransistor Output, Phototransistor Output, with Tilt Direction (3-direction) Detecting
GP1S36J0000F
■ Design Considerations
● Design guide
1) Prevention of malfunction
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
Please confirm that there is no mis-operation by magnetic field in use, for prevention of mis-operation by
magnetic field.
Please don`t let the device put in change of temperature that makes dew for prevention of mis-operation
by dew.
If the device is put in the change of temperature which makes dew, please leave the device for enough
time in the constant temperature for use.
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Phototransistor
Silicon (Si)
Maximum Sensitivity
wavelength (nm)
800
Sensitivity
wavelength (nm)
700 to 1 200
Response time (μs)
12
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
Maximum light emitting
wavelength (nm)
950
I/O Frequency (MHz)
0.3
• Material
Case
Black polyphenylene
sulfide resin (UL94 V-0)
Lead frame
42Alloy
Lead frame plating
SnCu plating
Packing case
Polycarbonate
Metal ball
Fe
Sheet No.: D3-A05501EN
8